Samsung and AMD finalise HBM4 supply agreement for next-generation AI accelerators

Samsung Electronics and AMD have signed an MOU formalising supply and development of advanced memory for AI and data centre systems. The agreement covers HBM4 supply for AMD's Instinct MI355X successor and DDR5 for EPYC CPUs, with potential expansion into foundry services.

Samsung Electronics and AMD have expanded their nearly two-decade-long technology partnership through a memorandum of understanding focused on next-generation AI infrastructure. The agreement, formalised at Samsung's Pyeongtaek complex, secures Samsung as a primary supplier of HBM4 memory for AMD's upcoming Instinct MI355X GPU successor and provides for collaboration on advanced DRAM solutions optimised for the 6th Gen AMD EPYC 'Venice' CPUs.

Samsung's HBM4, built on its 1c DRAM process and a 4nm logic die, offers bandwidth exceeding 3.3 TB/s, which is critical for the system-level performance required by AMD's rack-scale platforms, including the Helios architecture. The companies will also explore opportunities for Samsung to provide foundry services for future AMD products. The agreement comes as memory bandwidth and power efficiency become primary bottlenecks in AI compute performance.

For data centre operators and enterprises deploying AI infrastructure, this integrated approach between memory manufacturer and chip designer aims to deliver optimised, turnkey systems. The collaboration directly impacts the AI accelerator market, where access to cutting-edge HBM is a key competitive differentiator. Samsung Electronics, a South Korean memory and semiconductor leader, and AMD, a US-based designer of high-performance computing products, are positioning their combined technology stack to capture enterprise and hyperscale AI workloads.