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XMax expands AI infrastructure strategy with acquisition of power semiconductor firm Hexa Creation

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XMax expands AI infrastructure strategy with acquisition of power semiconductor firm Hexa Creation
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XMax Inc. has signed a definitive share purchase agreement to acquire 100% of US-based Hexa Creation Inc. The acquisition expands XMax's enterprise focus into 1200V vertical gallium nitride power semiconductor technology designed for high-voltage AI data centers and energy storage applications.

UNITED STATES OF AMERICA —NASDAQ-listed technology firm XMax Inc. has executed a definitive share purchase agreement to acquire a 100% equity stake in Hexa Creation Inc., also known as HexaGaN. Detailed terms of the transaction were disclosed in a regulatory filing with the US Securities and Exchange Commission on October 9, 2026. The acquisition integrates Hexa Creation's proprietary high-voltage power semiconductor technology into XMax's corporate portfolio.

XMax Inc. is a US-based enterprise operating across contemporary furniture distribution and artificial intelligence platform services, including GPU computing offerings managed through its subsidiaries XMax AI Inc. and Elonx AI Holdings PTE. LTD. Hexa Creation Inc. is an American semiconductor development firm specializing in 1200V vertical gallium nitride (GaN) trench MOSFET power devices, holding exclusive intellectual property licenses derived from a major US research university.

The acquisition targets rising power demands across next-generation artificial intelligence computing infrastructure, where data center architectures are transitioning toward higher voltage power delivery networks, such as 800VDC systems. Hexa Creation's vertical GaN technology offers higher power density and efficiency across high-voltage applications compared to conventional 650V silicon and planar GaN devices. Beyond AI data center power systems, the technology platform targets high-power applications across electric vehicles, energy storage, and ultra-fast charging infrastructure, with future expansion plans into integrated power modules.

This transaction highlights an increasing strategic imperative for AI platform providers to secure advanced hardware technologies that reduce power consumption and heat dissipation in high-density data centers. For semiconductor manufacturers, enterprise computing operators, and power electronics investors, scaling 1200V vertical GaN devices addresses critical efficiency bottlenecks, strengthening energy management across expanding artificial intelligence infrastructure and industrial power networks.

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